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(2) Other strategic goods and technology as follows:
(b) subject to the “General Technology Note” in Group 1 of the Guide, technology, other than that are referred to in Group 1 of the Guide, as follows:
(iii) technology for the development or production of coating systems that are designed to protect ceramic matrix composite materials specified in item 1-1.C.7 of the Guide from corrosion, and to operate at temperatures exceeding 1,373.15 K (1,100℃), and
(c) systems, equipment and components, other than those referred to in Group 1 of the Guide, as follows:
(i) Complementary Metal Oxide Semiconductor (CMOS) integrated circuits designed to operate at an ambient temperature equal to or less (better) than 4.5 K (-268.65°C),
(iii) parametric signal amplifiers designed to operate at an ambient temperature below 1 K (-272.15 ℃) and at a frequency from 2 GHz to 15 GHz, and having a noise figure of less than 0.015 dB when operating at that temperature and frequency,
(iv) cryogenic cooling systems and components, as follows:
(A) systems rated to provide a cooling power of 600 µW or more at a temperature of 0.1 K (-273.05°C) or lower for more than 48 hours, and
(B) two-stage pulse tube cryocoolers rated to maintain a temperature lower than 4 K (-269.15°C) and to provide a cooling power of 1.5 W or more at a temperature of 4.2 K (-268.95°C) or lower;
(d) test, inspection and production equipment, other than that referred to in Group 1 of the Guide, as follows:
(iii) equipment designed for dry etching, as follows:
(B) equipment designed or modified for anisotropic dry etching, and having all of the following:
(III) an electrostatic chuck with 20 or more individually controllable variable temperature elements, and
(v) additive manufacturing machines designed to produce metal or metal alloy components and having the following characteristics, and specially designed components for those machines:
(C) the in-process monitoring equipment in a coaxial or paraxial configuration has any of the following:
(II) a pyrometer designed to measure temperatures greater than 1,273.15K (1,000°C), or
(viii) cryogenic wafer probing equipment designed to test devices at a temperature less than or equal to 4.5 K (-268.65°C), and to accommodate wafer diameters greater than or equal to 100 mm;
